Recent Publications

1. "Detection of an endocrine disrupter biomarker, vitellogenin, inlargemouth bass serum using AlGaN/GaN high electron mobility transistors", Byung Hwan Chu, C. Y. Chang, K. Kroll, Nancy Denslow, Yu-Lin Wang, S. J. Pearton, A. M. Dabiran, A. M.Wowchak, B. Cui, P. P. Chow, and Fan Ren, Appl. Phys. Lett. 96, 013701 (2010)

2. "Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated Aluminum", S. Taking, A. Banerjee, H. Zhou, X. Li, I. McGregor, S. Bentley, F. Rahman, I. Thayne, A. Dabiran and E. Wasige, Electronics Letters 46, 301 (2010)

3. "Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors", Yu-Lin Wang, B.H. Chu, C.Y. Chang, C.F. Lo, S.J. Pearton, A. Dabiran, P.P. Chow, F. Ren, Sensors and Actuators B 146, pp.349-352(2010).

4. "Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors", C. F. Lo, C. Y. Chang, B. H. Chu, S. J. Pearton, A. Dabiran, P. P. Chow, and F. Ren, Appl. Phys. Lett. 96, 232106 (2010)

5. "Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy", A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. M. Dabiran, P. P. Chow, A. M. Wowchak, and S. J. Pearton, J. Appl. Phys. 107, 023708 (2010)

6. "Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes", J. B. You1, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu2, B. Cui, A. M. Wowchak, A. M. Dabiran, and P. P. Chow, Appl. Phys. Lett. 96, 201102 (2010)

7. "Real-time Detection of Botulinum Toxin withAlGaN/GaN High Electron Mobility Transistors"Yu-Lin Wang, Byung Hwan Chu, Ke-Hung Chen, C.Y. Chang, T.P. Lele, and Y. Tseng, Stephen J. Pearton, J.Ramage and D. Hooten, A. Dabiran and P.P. Chow, F Ren, , ECS Trans. 19, 123 (2009)

8. "Passivation of AlN/GaN high electron mobility transistor using ozone treatment", C. F. Lo, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, and F. Ren, J.Vac.Sci.Technol.B.28, 52 (2010).

9. "High temperature stable contacts for GaN HEMTs and LEDs", Pearton, S.J., Voss, L.F.; Khanna, R.; Lim, Wantae; Stafford, L.; Ren, F.; Dabiran, A.; Osinsky, A.; Materials Research Society Symposium Proceedings, v 1108, p 9-18, 2009, Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices

10. "Recessed 70-nm gate-length AlGaN/GaN HEMTs fabricated using an Al2O3/SiNx dielectric layer", Kim, Donghyun; Kumar, Vipan; Lee, Jaesun; Yan, Minjun; Dabiran, A.M.; Wowchak, A.M.; Chow, Peter P.; Adesida, Illesanmi; IEEE Electron Device Letters, v 30, n 9, p 913-915, 2009;

11. "Nitride image intensifiers", Glesener, J.W; Dabiran, A.M.; Estrera, J.P.; Proceedings of SPIE - The International Society for Optical Engineering, v 7339, 2009, Enabling Photonics Technologies for Defense, Security, and Aerospace Applications V

12. "Carrier screening effect in AlGaN quantum-well avalanche photodiode", Zhang, Sheng-; Wang, Wubao; Alfano, Robert R.; Dabiran, Amir M.; Wowchak, Andrew M.; Chow, Peter P.; Proceedings of SPIE - The International Society for Optical Engineering, v 7216, 2009, Gallium Nitride Materials and Devices IV;

13. "Thermal emittance and response time measurements of a GaN photocathode", Bazarov, Ivan V.; Dunham, Bruce M.; Liu, Xianghong; Virgo, Matt; Dabiran, Amir M.; Hannon, Fay; Sayed, Hisham; Journal of Applied Physics, v 105, n 8, 2009

14. "Minipressure sensor using AlGaN/GaN high electron mobility transistors", Hung, S.C.; Chou, B.H.; Chang, C.Y.; Lo, C.F.; Chen, K.H.; Wang, Y.L.; Pearton, S.J.; Dabiran, Amir; Chow, P.P.; Chi, G.C.; Ren, F.; Applied Physics Letters, v 94, n 4, 2009

15. "Direct deposition of GaN-based photocathodes on microchannel plates", Dabiran, Amir M; Wowchaka, Andrew M.; Chowa, Peter P.; Siegmund, Oswald H.W.; Hull, Jeffrey S.; Malloy, James; Tremsin, Anton S.; Proceedings of SPIE - The International Society for Optical Engineering, v 7212, 2009, Optical Components and Materials VI;

16. "Development of enhancement mode AlN/GaN high electron mobility transistors", Chang, C.Y.; Pearton, S.J.; Lo, C.F.; Ren, F.; Kravchenko, I.I.; Dabiran, A.M.; Wowchak, A.M.; Cui, B.; Chow, P.P.; Applied Physics Letters, v 94, n 26, 2009

17. "Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes", Anderson, T.J.; Wang, H.T.; Kang, B.S.; Ren, F.; Pearton, S.J.; Osinsky, A.; Dabiran, Amir; Chow, P.P.; Applied Surface Science, v 255, n 5 PART 1, p 2524-2526, December 30, 2008

18. "Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors", Yu, X.; Li, C.; Low, Z.N.; Lin, J.; Anderson, T.J.; Wang, H.T.; Ren, F.; Wang, Y.L.; Chang, C.Y.; Pearton, S.J.; Hsu, C.H.; Osinsky, A.; Dabiran, A.; Chow, P.; Balaban, C.; Painter, J.; Sensors and Actuators, B: Chemical, v 135, n 1, p 188-194, December 10, 2008

19. "Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors", Chen, K.H.; Wang, H.W.; Kang, B.S.; Chang, C.Y.; Wang, Y.L.; Lele, T.P.; Ren, F.; Pearton, S.J.; Dabiran, A.; Osinsky, A.; Chow, P.P.; Sensors and Actuators, B: Chemical, v 134, n 2, p 386-389, September 25, 2008

20. "Electrical properties of GaN(Fe) buffers for AlGaNGaN high electron mobility transistor structures", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Yugova, T.G.; Markov, A.V.; Dabiran, A.M.; Wowchak, A.M.; Cui, B.; Xie, J.; Osinsky, A.V.; Chow, P.P.; Pearton, S.J.; Applied Physics Letters, v 92, n 4, 2008

21. "AlGaN/GaN HEMT and ZnO nanorod based sensors for chemical and bio-applications", Kang, B.S.; Wang, Hung-Ta; FRen; Chancellor, T.J.; Lele, T.P.; Tseng, Y.; Pearton, S.J.; Morey, T.E.; Dennis, D.M.; Johnson, J.W.; Rajagopal, P.; Roberts, J.C.; Piner, E.L.; Linthicum, K.J.; Dabiran, A.; Osinsky, A.; Chow, P.P.; ECS Transactions, v 13, n 3, p 53-63, 2008, ECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications;

22. "Gallium nitride photocathode development for imaging detectors", Siegmund, Oswald H.W; Tremsin, Anton S.; Vallerga, John V.; McPhate, Jason B.; Hull, Jeffrey S.; Malloy, James; Dabiran, Amir M.; Proceedings of SPIE - The International Society for Optical Engineering, v 7021, 2008, High Energy, Optical, and Infrared Detectors for Astronomy III

23. "Hybrid CdZnO/GaN quantum-well light emitting diodes", Mares, J.W.; Falanga, M.; Thompson, A.V.; Osinsky, A.; Xie, J.Q.; Hertog, B.; Dabiran, A.; Chow, P.P.; Karpov, S.; Schoenfeld, W.V.; Journal of Applied Physics, v 104, n 9, 2008

24. "Electron irradiation of AlGaNGaN and AlN/GaN heterojunctions", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Markov, A.V.; Pearton, S.J.; Dabiran, A.M.; Wowchak, A.M.; Cui, B.; Osinsky, A.V.; Chow, P.P.; Kolin, N.G.; Boiko, V.M.; Merkurisov, D.I.; Applied Physics Letters, v 93, n 15, 2008

25. "Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Markov, A.V.; Yugova, T.G.; Dabiran, A.M.; Wowchak, A.M.; Cui, B.; Osinsky, A.V.; Chow, P.P.; Pearton, S.J.; Scherbatchev, K.D.; Bublik, V.T.; Journal of Applied Physics, v 104, n 5, 2008

26. "Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors", Yu, X; Li, C.; Low, Z.N.; Lin, J.; Anderson, T.J.; Wang, H.T.; Ren, F.; Wang, Y.L.; Chang, C.Y.; Pearton, S.J.; Hsu, C.H.; Osinsky, A.; Dabiran, A.; Chow, P.; Balaban, C.; Painter, J.; ECS Transactions, v 16, n 7, p 127-137, 2008, ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9;

27. "Injection and avalanche electroluminescence of Al0.1Ga 0.9N/Al0.15Ga0.85N multiple quantum wells", Zhang, Sheng-Kun; Wang, Wubao; Alfano, Robert R.; Dabiran, Amir M.; Osinsky, Andrei; Wowchak, Andrew M.; Hertog, Brian; Chow, Peter P.; IEEE Journal on Selected Topics in Quantum Electronics, v 14, n 4, p 1010-1013, July-August 2008

28. "Botulinum toxin detection using AlGaNGaN high electron mobility transistors", Wang, Yu-; Chu, B.H.; Chen, K.H.; Chang, C.Y.; Lele, T.P.; Tseng, Y.; Pearton, S.J.; Ramage, J.; Hooten, D.; Dabiran, A.; Chow, P.P.; Ren, F.; Applied Physics Letters, v 93, n 26, 2008

29. "Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures", Dabiran, A.M.; Wowchak, A.M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Look, D.C.; Chow, P.P.; Applied Physics Letters, v 93, n 8, 2008

30. "Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors", Wang, Liang; Adesida, Ilesanmi; Dabiran, Amir M.; Wowchak, Andrew M.; Chow, Peter P.; Applied Physics Letters, v 93, n 3, 2008

31. "Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGa/NGaN heterostructure transistors", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Markov, A.V.; Dabiran, A.M.; Wowchak, A.M.; Osinsky, A.V.; Cui, B.; Chow, P.P.; Pearton, S.J.; Applied Physics Letters, v 91, n 23, 2007

32. "Luminescence properties of defects in ZnO", Reshchikov, M.A.; Morkoç, H.; Nemeth, B.; Nause, J.; Xie, J.; Hertog, B.; Osinsky, A.; Physica B: Condensed Matter, v 401-402, p 358-361, December 15, 2007

33. "Electroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes", Xinyu Wang, Jesse Cole, Amir M. Dabiran, Heiko O Jacobs, NSTI-Nanotech 2007, www.nsti.org, ISBN 1420063766 Vol. 4, 2007

34. "Optical and morphological properties of MBE grown wurtzite CdxZn1-xO thin films", Mares, J.W.; Ruhge, F.R.; Thompson, A.V.; Kik, P.G.; Osinsky, A.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Schoenfeld, W.V.; Optical Materials, v 30, n 2, p 346-350, October 2007

35. "Selective detection of Hgions from Cu and Pb using AlGaNGaN high electron mobility transistors", Wang, H.T.; Kang, B.S.; Chancellor, T.F.; Lele, T.P.; Tseng, Y.; Ren, F.; Pearton, S.J.; Dabiran, A.; Osinsky, A.; Chow, P.P.; Electrochemical and Solid-State Letters, v 10, n 11, p 150-153, 2007

36. "Semi-insulating, Fe-doped buffer layers grown by molecular beam epitaxy", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Markov, A.V.; Yugova, T.G.; Petrova, E.A.; Dabiran, A.M.; Wowchak, A.M.; Osinsky, A.V.; Chow, P.P.; Pearton, S.J.; Shcherbatchev, K.D.; Bublik, V.T.; Journal of the Electrochemical Society, v 154, n 9, p H749-H754, 2007

37. "Stable hydrogen sensors from AlGaN/GaN heterostructure diodes with TiB 2-based Ohmic contacts", Wang, Hung-Ta; Anderson, T.J.; Kang, B.S.; Ren, F.; Li, Changzhi; Low, Zhen-Ning; Lin, Jenshan; Gila, B.P.; Pearton, S.J.; Osinsky, A.; Dabiran, Amir; Applied Physics Letters, v 90, n 25, 2007

38. "Epitaxial growth and characterization of AlGaN / GaN HEMT devices on SiC substrates for RF applications", Sood, Ashok K.; Puri, Yash R.; Clarke, Frederick W.; Deng, Jie; Hwang, James C. M.; Brierley, Steven K.; Khan, M. Asif; Dabiran, Amir; Chow, Peter; Laboutin, Oleg A.; Welser, Roger E.; Proceedings of SPIE - The International Society for Optical Engineering, v 6473, 2007, Gallium Nitride Materials and Devices II

39. "Thermal stability of Ohmic contacts to InN", Khanna, Rohit; Gila, B.P.; Stafford, L.; Pearton, S.J.; Ren, F.; Kravchenko, I.I.; Dabiran, Amir; Osinsky, A.; Applied Physics Letters, v 90, n 16, 2007

40. "Electrical, photoelectrical, and luminescent properties of doped p -type GaN superlattices", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Shcherbatchev, K.D.; Bublik, V.T.; Voronova, M.I.; Dabiran, Amir M.; Osinsky, A.V.; Pearton, S.J.; Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v 25, n 1, p 69-73, 2007

41. "ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC", Kim, D.H.; Kumar, V.; Chen, G.; Dabiran, A.M.; Wowchak, A.M.; Osinsky, A.; Adesida, I.; Electronics Letters, v 43, n 2, p 127-128, 2007

42. "GaN-based devices for reliable operation at very high temperatures", Dabiran, A.M.; Osinsky, A.; Chow, P.P.; Fitch, R.C.; Moser, N.; Crespo, A.; Anderson, T.J.; Ren, F.; Khanna, Rohit; Stafford, L.; Pearton, S.J.; ECS Transactions, v 3, n 5, p 349-357, 2006, State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7

43. "Properties of CdZnO/ZnO heterostructures for UV light emitters", Osinsky, A.V.; Dong, J.W.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Schoenfeld, W.; Pearton, S.J.; Look, D.C.; Cartwright, A.N.; ECS Transactions, v 3, n 5, p 323-331, 2006, State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7

44. "Optical characterization of Zn1-xCdxO alloys grown by molecular-beam epitaxy", Buyanova, I.A.; Wang, X.J.; Chen, W.M.; Izadifard, M.; Norton, D.P.; Pearton, S.J.; Osinsky, A.; Dong, J.W.; Dabiran, A.; ECS Transactions, v 3, n 5, p 391-398, 2006, State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7

45. "Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes", Wang, Hung-Ta; Anderson, T.J.; Ren, F.; Li, Changzhi; Low, Zhen-Ning; Lin, Jenshan; Gila, B.P.; Pearton, S.J.; Osinsky, A.; Dabiran, Amir; Applied Physics Letters, v 89, n 24, 2006

46. "Novel thermally stable contacts to GaN", Stafford, L.; Khanna, R.; Voss, L.F.; Pearton, S.J.; Anderson, T.J.; Ren, F.; Dabiran, Amir; Osinsky, A.; ECS Transactions, v 3, n 5, p 341-347, 2006, State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7

47. "Low-voltage avalanche breakdown in AlGaN multi-quantum wells", Zhang, Shengkun; Zhou, X.; Wang, Wubao; Alfano, R.R.; Dabiran, A.M.; Osinky, A.; Wowchak, A.M.; Hertog, B.; Plaut, C.; Chow, P.P.; Materials Research Society Symposium Proceedings, v 955, p 116-118, 2006, Advances in III-V Nitride Semiconductor Materials and Devices

48. "Modeling and characterization of GaN p-i-n photodiodes", Deng, Jie; Halder, Subrata; Hwang, James C. M.; Hertog, Brian; Xie, Junqing; Dabiran, Amir; Osinsky, Andrei; Proceedings of SPIE - The International Society for Optical Engineering, v 6294, 2006, Infrared and Photoelectronic Imagers and Detector Devices II

49. "Band gap properties of Zn1-xCdxO alloys grown by molecular-beam epitaxy", Wang, X.J.; Buyanova, I.A.; Chen, W.M.; Izadifard, M.; Rawal, S.; Norton, D.P.; Pearton, S.J.; Osinsky, A.; Dong, J.W.; Dabiran, Amir; Applied Physics Letters, v 89, n 15, 2006

50. "Electrical and optical properties of doped p-type GaN superlattices", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Dabiran, Amir M.; Osinsky, A.V.; Pearton, S.J.; Applied Physics Letters, v 89, n 11, 2006

51. "ZnCdO/ZnMgO and ZnO/AlGaN heterostructures for UV and visible light emitters", Osinsky, A.V.; Dong, J.W.; Xie, J.Q.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Pearton, S.J.; Norton, D.P.; Look, D.C.; Schoenfeld, W.; Lopatiuk, O.; Chernyak, L.; Cheung, M.; Cartwright, A.N.; Gerhold, M.; Materials Research Society Symposium Proceedings, v 891, p 371-379, 2006, Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications

52. "Electrical properties of undoped bulk ZnO substrates", Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Kozhukhova, E.A.; Pearton, S.J.; Norton, D.P.; Osinsky, A.; Dabiran, Amir; Journal of Electronic Materials, v 35, n 4, p 663-669, April 2006, Group III Nitrides, SiC, and ZnO

53. "Polarization management techniques for enhanced vertical and lateral transport in III-Nitride superlattices", Kauser, Mohammad Z.; Osinsky, Andrei; Hertog, Brian; Dabiran, Amir; Chow, Peter; Proceedings of SPIE - The International Society for Optical Engineering, v 6121, 2006, Gallium Nitride Materials and Devices

54. "ZnCdO/ZnMgO and ZnO/AlGaN heterostructures for UV and visible light emitters", Osinsky, A.V.; Dong, J.W.; Xie, J.Q.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Pearton, S.J.; Norton, D.P.; Look, D.C.; Schoenfeld, W.; Lopatiuk, O.; Chernyak, L.; Cheung, M.; Cartwright, A.N.; Gerhold, M.; Materials Research Society Symposium Proceedings, v 892, p 429-437, 2006

55. "Design and development of MBE grown AlGaN/GaN HEMT devices on SiC substrates for RF applications", Sood, Ashok K.; Singh, Rajwinder; Puri, Yash R.; Clarke, Frederick W.; Dabiran, Amir; Chow, Peter; Deng, Jie; Hwang, James C. M.; Materials Research Society Symposium Proceedings, v 892, p 325-334, 2006

56. "W2B based high thermal stability ohmic contacts to n-GaN", Khanna, Rohit; Pearton, S.J.; Kao, C.J.; Kravchenko, I.; Ren, F.; Chi, G.C.; Dabiran, A.; Osinsky, A.; Materials Research Society Symposium Proceedings, v 892, p 341-350, 2006

57. "Optical characterization of ZnMnO-based dilute magnetic semiconductor structures", Buyanova, I.A.; Chen, W.M.; Ivill, M.P.; Pate, R.; Norton, D.P.; Pearton, S.J.; Dong, J.W.; Osinsky, A.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v 24, n 1, p 259-262, January/February 2006

58. "Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells", Zhang, S.K.; Wang, W.B.; Dabiran, A.M.; Osinsky, A.; Wowchak, A.M.; Hertog, B.; Plaut, C.; Chow, P.P.; Gundry, S.; Troudt, E.O.; Alfano, R.R.; Applied Physics Letters, v 87, n 26, p 1-3, 2005

59. "Fabrication of ZnO/GaN hybrid light-emitting diodes", Han, Sang Youn; Yang, H.S.; Heo, Y.W.; Baik, K.H.; Norton, D.P.; Pearton, S.J.; Ren, F.; Osinsky, A.; Dong, J.W.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Chemyak, L.; Steiner, T.; Kao, C.J.; Chi, G.C.; ECS Transactions, v 1, n 2, p 58-63, 2005, State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

60. "Direct measurement of ion beam induced, nanoscale roughening of GaN", Cui, Bentao; Cohen, P.I.; Dabiran, A.M.; Materials Research Society Symposium Proceedings, v 864, p 201-206, 2005, Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices

61. "Electron trapping effects in C- and Fe-doped GaN and AlGaN", Lopatiuk, Olena; Osinsky, Andrei; Dabiran, Amir; Gartsman, Konstantin; Feldman, Isai; Chernyak, Leonid; Solid-State Electronics, v 49, n 10, p 1662-1668, October 2005

62. "Direct measurement of curvature-dependent ion etching of GaN", Cui, Bentao; Cohen, P.I.; Dabiran, A.M.; Jorgenson, Robert; Journal of Applied Physics, v 98, n 8, p 1-7, October 15, 2005

63. "Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes", Yang, Hyuck Soo; Han, Sang Youn; Heo, Y.W.; Baik, K.H.; Norton, D.P.; Pearton, S.J.; Ren, F.; Osinsky, A.; Dong, J.W.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Chernyak, L.; Steiner, T.; Kao, C.J.; Chi, G.C.; Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v 44, n 10, p 7296-7300, October 11, 2005

64. "Optimization of p-type AlGaN/GaN and GaN/InGaN superlattice design for enhanced vertical transport", Kauser, M.Z.; Osinsky, A.; Dong, J.W.; Hertog, B.; Dabiran, A.; Chow, P.P.; Materials Research Society Symposium Proceedings, v 831, p 239-244, 2005, GaN, AlN, InN and their Alloys

65. "Electrical detection of immobilized proteins with ungated AlGaNGaN high-electron-mobility Transistors", Kang, B.S.; Ren, F.; Wang, L.; Lofton, C.; Tan, Weihong W.; Pearton, S.J.; Dabiran, A.; Osinsky, A.; Chow, P.P.; Applied Physics Letters, v 87, n 2, p 1-3, July 11, 2005

66. "Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications", Dong, J.W.; Osinsky, A.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Heo, Y.W.; Norton, D.P.; Pearton, S.J.; Journal of Electronic Materials, v 34, n 4, p 416-423, April 2005

67. "Nanostructure formation during ion-assisted growth of GaN by molecular beam epitaxy", Cui, Bentao; Cohen, P.I.; Dabiran, A.M.; Journal of Applied Physics, v 97, n 10, p 1-6, May 15, 2005

68. "Optimization of conductivity in p-type GaN/InGaN-graded superlattices", Kauser, M.Z.; Osinsky, A.; Dabiran, A.M.; Pearton, S.J.; Journal of Applied Physics, v 97, n 8, p 1-5, April 27, 2005

69. "Detection of halide ions with AlGaN/GaN high electron mobility transistors", Kang, B.S.; Ren, F.; Kang, M.C.; Lofton, C.; Tan, Weihong; Pearton, S.J.; Dabiran, A.; Osinsky, A.; Chow, P.P.; Applied Physics Letters, v 86, n 17, p 1-3, April 25, 2005

70. "Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors", Kang, B.S.; Kim, S.; La Roche, J.R.; Ren, F.; Fitch, R.C.; Gillespie, J.K.; Moser, N.; Jenkins, I.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.; Pearton, S.J.; Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v 22, n 6, p 2635-2639, November/December 2004

71. "Carrier trapping and thermal effects in GaN-based high-electron mobility transistors", Dabiran, A.M.; Osinsky, A.; Chow, P.P.; Zhang, Z.; Madjar, A.; Osinsky, S.; Hwang, J.C.M.; Fitch, A.C.; Gillespie, J.; Jessen, G.; Moser, N.; Crespo, A.; Proceedings - Electrochemical Society, v 6, p 380-385, 2004, State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

72. "Trapping and thermal effects in III-N HEMTs", Dabiran, A.M.; Osinsky, A.; Chow, P.P.; Zhang, Z.; Madjar, A.; Osinsky, S.; Hwang, J.C.M.; Fitch, R.C.; Gillespie, J.; Jessen, G.; Moser, N.; Crespo, A.; Meeting Abstracts, p 1253, 2004, 2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan, MA 2004-02

73. "Effect of silicon nitride PECVD growth on AIGaN/GaN HEMT dispersion and breakdown characteristics", Fitch, Robert; Gillespie, James; Via, Dave; Agresta, Don; Jenkins, Thomas; Jessen, Gregg; Moser, Neil; Crespo, Antonio; Dabiran, Amir; Osinsky, Andrea; Meeting Abstracts, p 1262, 2004, 2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan, MA 2004-02

74. "AlGaN/GaN high electron mobility transistors for high-power and low-noise applications", Wang, Xiaoguang; Dabiran, Amir M; Hartmann, Ralf; Chow, Peter P; Journal of Rare Earths, v 22, n SUPPL. 2, p 279-281, December 2004

75. "MgZaO/ZnO heterostructures for UV light emitters and spintronic applications: Material growth and device design (Invited Talk)", Osinsky, A.; Dong, J.W.; Kauser, M.Z.; Hertog, B.; Dabiran, A.M.; Plaut, C.; Chow, P.P.; Pearton, S.J.; Dong, X.Y.; Palmstrom, C.J.; Proceedings - Electrochemical Society, v 6, p 70-79, 2004, State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

76. "Effect of silicon nitride PECVD growth on AlGaN/GaN HEMT dispersion and breakdown characteristics", Fitch, Robert; Gillespie, James; Via, Dave; Agresta, Don; Jenkins, Thomas; Jessen, Gregg; Moser, Neil; Crespo, Antonio; Dabiran, Amir; Osinsky, Andrea; Proceedings - Electrochemical Society, v 6, p 459-464, 2004, State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

77. "Development of high performance AlGaN/GaN high electron mobility transistors for RF applications", Sood, Ashok K.; Egerton, E. James; Puri, Yash R.; Clarke Jr., Frederick W.; Hwang, James C. M.; Dabiran, Amir; Chow, Peter; Anderson, Tom; Gupta, Avi; Souzis, Andy; Zwieback, Ilya; Proceedings of SPIE - The International Society for Optical Engineering, v 5550, p 130-144, 2004, Free-Space Laser Communications IV

78. "MgZnO/ZnO heterostructures for UV light emitters and spintronic applications: Material growth and device design", Osinsky, A.; Dong, J.W.; Kauser, M.Z.; Dabiran, A.M.; Plaut, C.; Chow, P.P.; Pearton, S.J.; Dong, X.Y.; Palmstrom, C.J.; Meeting Abstracts, p 1413, 2004, 2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan, MA 2004-02

79. "Enhanced vertical transport in p-type AlGaN/GaN superlattices", Kauser, M.Z.; Osinsky, A.; Dabiran, A.M.; Chow, P.P.; Applied Physics Letters, v 85, n 22, p 5275-5277, November 29, 2004

80. "MgZnO/AIGaN heterostructure light-emitting diodes", Osinsky, A.; Dong, J.W.; Kauser, M.Z.; Hertog, B.; Dabiran, A.M.; Chow, P.P.; Pearton, S.J.; Lopatiuk, O.; Chemyak, L.; Applied Physics Letters, v 85, n 19, p 4272-4274, November 8, 2004

81. "AlGaN/InGaN HEMTs for RF current collapse suppression", Lanford, W.; Kumar, V.; Schwindt, R.; Kuliev, A.; Adesida, I.; Dabiran, A.M.; Wowchak, A.M.; Chow, P.P.; Lee, J.-W.; Electronics Letters, v 40, n 12, p 771-772, June 10, 2004

82. "Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors", Fitch, R.C.; Gillespie, J.K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.; La Roche, J.R.; Ren, F.; Pearton, S.J.; Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v 22, n 2, p 619-623, March/April 2004

83. "Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors", Fitch, R.C.; Gillespie, J.K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.; La Roche, J.R.; Ren, F.; Pearton, S.J.; Applied Physics Letters, v 84, n 9, p 1495-1497, March 1, 2004

84. "Temperature dependence of pnp GaN/InGaN HBT performance", Lee, K.P.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.; Pearton, S.J.; Ren, F.; Solid-State Electronics, v 48, n 1, p 37-41, January 2004

85. "High performance wide-bandgap photonic and electronic devices grown by MBE", Dabiran, A.M.; Osinsky, A.; Hertog, B.; Kauser, M.Z.; Chow, P.P.; Kumar, V.; Adesida, I.; Proceedings - Electrochemical Society, v 11, p 179-181, 2003, State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

86. "Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers", Gillespie, J.K.; Fitch, R.C.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.; Mastro, M.A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Pearton, S.J.; Ren, F.; Solid-State Electronics, v 47, n 10, p 1859-1862, October 2003

87. "RF performance of GaN-based npn bipolar transistors", Lee, K.P.; Dabiran, A.; Osinsky, A.; Chow, P.P.; Pearton, S.J.; Ren, F.; Solid-State Electronics, v 47, n 9, p 1501-1506, September 2003

88. "Effects of base structure on performance of GaN-based heterojunction bipolar transistors", Lee, K.P.; Ren, F.; Pearton, S.J.; Dabiran, A.M.; Chow, P.P.; Solid-State Electronics, v 47, n 6, p 1031-1036, June 2003

89. "Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs", Lee, K.P.; Dabiran, A.; Chow, P.P.; Pearton, S.J.; Ren, F.; Solid-State Electronics, v 47, n 6, p 969-974, June 2003

90. "Simulations of InGaN-base heterojunction bipolar transistors", Lee, K.P.; Ren, F.; Pearton, S.J.; Dabiran, A.M.; Chow, P.P.; Solid-State Electronics, v 47, n 6, p 1009-1014, June 2003

91. "Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-Al x Ga 1-x N", Burdett, William; Osinsky, Andrei; Kotlyarov, Vladimir; Chow, Peter; Dabiran, Amir; Chernyak, Leonid; Solid-State Electronics, v 47, n 5, p 931-935, May 2003

92. "0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length", Kuliev, A.; Kumar, V.; Schwindt, R.; Selvanathan, D.; Dabiran, A.M.; Chow, P.; Adesida, I.; Solid-State Electronics, v 47, n 1, p 117-122, January 2003

93. "Multisubband photoluminescence in p-type modulation-doped AlxGa1-xN/GaN superlattices", Waldron, E.L.; Schubert, E.F.; Dabiran, A.M.; Physical Review B (Condensed Matter and Materials Physics), v 67, n 4, p 45327-1-7, 15 Jan. 2003

94. "Effect of recess length on DC and RF performance of gate-recessed AlGaN/ GaN HEMTs", Kuliev, A.; Kumar, V.; Schwindt, R.; Selvanathan, D.; Dabiran, A.M.; Chow, P.; Adesida, I.; Proceedings IEEE Lester Eastman Conference on High Performance Devices, p 428-435, 2002

95. "Improved mobilities and resistivities in modulation-doped P-type AlGaN/GaN superlattices", Waldron, Erik L.; Graff, John W.; Schubert, E. Fred; Dabiran, Amir M.; Materials Research Society Symposium - Proceedings, v 693, p 823-828, 2002

96. "Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3", Luo, B.; Johnson, J.W.; Gila, B.P.; Onstine, A.; Abernathy, C.R.; Ren, F.; Pearton, S.J.; Baca, A.G.; Dabiran, A.M.; Wowchack, A.M.; Chow, P.P.; Solid-State Electronics, v 46, n 4, p 467-476, Apri2002

97. "Influence of 60Co -rays on dc performance of AlGaN/GaN high electron mobility transistors"; by Luo B, Johnson JW, Ren F, Allums KK, Abernathy CR, Pearton SJ, Dabiran AM, Wowchack AM, Polley CJ, Chow PP, D. Schoenfeld, Baca AG; Appl. Phys. Lett. 80 (2002) 604.

98. "High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors"; Luo B, Johnson JW, Ren F, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Dabiran AM, Wowchack AM, Polley CJ, Chow PP, Baca AG; TMS Conference proceedings; IEEE J. of Elec. Mat., 31 (2002) 437.

99. "Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths", Johnson, J.W.; Ren, F.; Pearton, S.J.; Baca, A.G.; Han, J.; Dabiran, A.M.; Chow, P.P.; Journal of Nanoscience and Nanotechnology, v 2, n 3-4, p 325-32, June-Aug. 2002

100. "Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer", Liu, Y.; Kauser, M.Z.; Nathan, M.I.; Ruden, P.P.; Dabiran, A.M.; Hertog, B.; Chow, P.P.; Applied Physics Letters, v 81, n 18, p 3398-400, 28 Oct. 2002

101. "dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors", by Luo B, Johnson JW, Ren F, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R, Dabiran AM, Wowchack AM, Polley CJ, Chow PP, Baca AG., Appl. Phys. Lett. 79 (2001) 2196.

102. "Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE", Johnson, J.W.; Baca, A.G.; Briggs, R.D.; Shul, R.J.; Wendt, J.R.; Monier, C.; Ren, F.; Pearton, S.J.; Dabiran, A.M.; Wowchack, A.M.; Polley, C.J.; Chow, P.P.; Solid-State Electronics, v 45, n 12, p 1979-1985, December 2001

103. "Hexagonal Growth Spirals on GaN Grown by Molecular-Beam-Epitaxy: Kinetics versus Thermodynamics"; by A. Parkhamovsky, A.M. Dabiran, B. Benjaminsson, and P.I. Cohen; Appl. Phys. Lett. 78 (2001) 2315.

104. "A Rate Equation Model for the Growth of GaN on GaN(000-1) by Molecular Beam Epitaxy"; by R. Held, B.E. Ishaug, A. Parkhomovsky, A.M. Dabiran, P.I. Cohen; J. Appl. Phys. 87 (2000).

105. "Morphology dependent growth kinetics of Ga-polar GaN(0001)", Parkhomovksy, A.; Benjaminsson, B.; Ishaug, B.E.; Dabiran, A.M.; Cohen, P.I. ; Proceedings of International Workshop on Nitride Semiconductors, p 220-3, 2000

106. "Step Edge Barriers versus Step Relaxation in GaAs:Sn Molecular Beam Epitaxy"; by A.M. Dabiran, S.M. Seutter, S. Stoyanov, M.C. Bartelt, J.W. Evans, P.I. Cohen; Surf. Sci. 438 (1999) 131.

107. "Direct observations of the strain-limited island growth of Sn-doped GaAs(100)", Dabiran, A.M.; Seutter, S.M.; Cohen, P.I.; Surface Review and Letters, v 5, n 3-4, p 783-95, June-Aug. 1998

108. "Structure and composition of GaN(0001) A and B surfaces"; by Held R, Nowak G, Ishaug BE, Seutter SM, Parkhomovsky A, Dabiran AM, Cohen PI, Grzegory I, Porowski S., J. Appl. Phys. .85 (1999) 7697.

109. "In Situ Control of GaN Growth by Molecular Beam Epitaxy", by R. Held, D.E. Crawford, A.M. Johnston, A. M. Dabiran and P.I. Cohen; J. Elect. Mat. 26 (1997) 272.

110. "NH3-Limited versus Ga-Limited Growth of GaN by MBE", by R. Held, D.E. Crawford, A.M. Johnston, A. M. Dabiran and P.I. Cohen; Surf. Rev. Lett. (1997).

111. "Framework of GaN Growth Kinetics by MBE", by D.E. Crawford, R. Held, A.M. Johnston, A. M. Dabiran and P.I. Cohen; J. Appl. Phys. (1997).

112. "Nucleation, growth and magnetic properties of epitaxial FeAl films on AlAs/GaAs", Ishaug, B.E..; Seutter, S.M.; Dabiran, A.M.; Cohen, P.I.; Farrow, R.F.C.; Weller, D.; Parkin, S.S.P. ; Surface Science, v 380, n 1, p 75-82, 1 May 1997

113. "Growth rate reduction of GaN due to Ga surface accumulation", Crawford, D.E.; Held, R.; Johnston, A.M.; Dabiran, A.M.; Cohen, P.I. ; MRS Internet Journal of Nitride Semiconductor Research, v 1, 1996

114. "Surface Reconstructions and Growth Mode Transitions of AlAs(100)", by A.M. Dabiran and P.I. Cohen; Journal of Crystal Growth 150 (1995) 23.

115. "Reflection High Energy Electron Diffraction Measurements of MBE Grown GaAs and InGaAs on GaAs(111)", by A. M. Dabiran, P. I. Cohen, J. E. Angelo and W. W. Gerberich; Thin Solid Films, 231 (1993) 1.

116. "Al and Ga Diffusion Barriers in Molecular Beam Epitaxy", by A.M. Dabiran, S.K. Nair, H.D. He, and P.I. Cohen; Surface Science 298 (1993) 384.

117. "Microstructural Characterization of Low Temperature GaAs(111)B MBE Growth by AFM and TEM", by M.P. de Boer, J.E. Angelo, A.M. Dabiran, P.I. Cohen, W.W. Gerberich; MRS Symposium Proc. (1993).

118. "Transmission Electron Microscopy of Twin Interfaces in GaAs/AlAs(111)B Superlattices", by J.E. Angelo, A.M. Dabiran, P.I. Cohen, and W.W. Gerberich; Journal of Cr

119. "Enhanced Surface Cation Mobility on Sn delta-doped (Ga,Al)As", by G. S. Petrich, A. M. Dabiran, and P. I. Cohen; Applied Physics Letters 61 (1992) 162.

120. "Controlled Growth of GaAs/AlAs(111)B", by J.E. Angelo, J.W. Hoehn, A.M. Dabiran, P.I. Cohen, and W.W. Gerberich; MRS Symposium Proceedings, 263 (1992) 175.

121. "The Effect of Sn ζ-Doping Layers on the Growth of InGaAs and GaAs", by G.S. Petrich, A.M. Dabiran, J.E. McDonald, and P.I. Cohen; Journal of Vacuum Science and Technology B 9 (1991) 2150.

122. "Floating Gate Technique as a Thermodynamic Probe of 2D Electron Systems", by A.M. Dabiran, F.F. Fang, T.P. Smith and P.J. Stiles; Surface Science 229 (1990) 67

123. "Electrochemical Potential Oscillations of the Two-Dimensional Electron Gas in GaAs/AlGaAs Heterostructures in High Magnetic Fields" by A.M. Dabiran, R.T. Zeller, F.F. Fang, S.L. Wright and P.J. Stiles; Surface Science 196 (1988) 712.

Books Chapters

1. "From Thermodynamics to Quantum Wires: A Review of Reflection High-Energy Electron Diffraction", (with P.I. Cohen, G.S. Petrich and P.R. Pukite), in the Kinetics of Ordering and Growth at Surfaces, M.G. Lagally, ed., Plenum Press, New York (1990), p. 225.

2. "Reflection High-energy Electron Diffraction", (with P.I. Cohen); in the Encyclopedia of Advanced Materials, David Bloor et al., ed., Elsevier Science, Oxford, UK (1994), p. 2272