Nitride MBE Systems

III-V MBE System
Nitride MBE System

For over 10 years SVTA's Application Laboratory has been recognized as a world leader in the growth of III-Nitride materials, and a supplier of molecular beam epitaxy systems. SVTA Nitride MBE (Molecular Beam Epitaxy) Systems have been specifically designed to grow high quality GaN, AlN and related Nitride materials. The growth module is designed to handle harsh active nitrogen content and is equipped with a high temperature substrate heater for uniform growth. The active nitrogen species are generated by either a RF Plasma or Ammonia Source.

The base system consists of two modules: Epitaxy Growth Module and Load Lock/Buffer/Preparation Module. The Nitride MBE system comes standard in either a linear or right angle configuration; a "cluster tool" configuration is also available. While SVTA has a library of standard designs, we are always ready to discuss your unique requirements. Transfers to chambers for surface analysis or other analytical techniques are available.

Contact SVTA for more information.