Application Laboratory & Wafer Services

Molecular Beam Epitaxy Wafer
Oxide MBE System

SVT Associates, Inc. has been actively working on the growth and characterization of III-Nitride materials and devices since 1992 using RF atomic nitrogen plasma assisted molecular beam epitaxy (PA-MBE). Wafer growth and characterization services are explained below:

III-Nitride MBE Wafer Specifications:

  • Epitaxial Layers
  • GaN, AlGaN, InGaN
  • 2" Wafer Uniformity
  • <2%
  • X-Ray FWHM GaN/A12O3
  • <3 arc min
  • N-Type Doping (Si)
  • 1017 to 1020 cm-3
  • P-type Doping (Mg)
  • up to 1019 cm-3
  • Insulating Buffer Donor Density
  • Nd <1016 cm-3 
  • MODFET Hall Mobility*
  • >1500 cm2 /Vs (300K)
      >4000 cm2 /Vs (77K)
  • Substrates
  • Sapphire, SiC, Si

    * HEMT characteristics depend on buffer and active layer structure.

    III-Nitride Epitaxial Services:

    • Nitride MBE growth on sapphire and silicon-carbide 2" and 3" wafers:
      • GaN (n-type, p-type, or insulating)
      • Custom ternary & quaternary InAlGaN films
    • High-frequency, high-power and low-noise III-N transistors:
      • High electron mobility transistors (HEMTs)
      • Bipolar junction transistors (HBTs & BJTs)
    • AlxGa1-xN high-efficiency, solar-blind UV photodetectors (PD):
      • Schottky and p-i-n PDs with cutoff wavelength from 365 down to 250 nm
      • Special structures including arrays, bandpass and MQW detectors
    • Custom epitaxial layers and structures, including:
      • Doped and undoped superlattice structures
      • Resonant tunneling structures (RTDs)
    • Wafer characterization:
      • In-situ cathodoluminescence
      • AFM and X-ray characterization
      • CV and Hall measurements

    Contact SVTA for more information.